How the OD-110W 850 nm NIR LED Improves Performance in Defense, Surveillance, and Industrial Sensing Systems

In defense, surveillance, and industrial sensing systems, the emitter is rarely a passive part. Illumination quality drives detection range, image clarity, timing accuracy, and reliability in the field, which means an emitter has to deliver the right wavelength, beam pattern, response speed, and durability, not just raw brightness. Opto Diode’s OD-110W is engineered for that balance: a super high-power GaAlAs near-infrared emitter with a typical 850 nm peak wavelength, 140 mW typical optical output, a wide 110° half-intensity beam angle, and 20 ns switching, all in a hermetic 3-lead TO-39 package rated from −40°C to +100°C.

Why emitter selection matters in mission-critical systems

In many electro-optical systems, illumination is central to how well the system performs, not a supporting afterthought. A poorly matched emitter can create uneven coverage, reduce usable signal, slow system response, or introduce reliability concerns in difficult conditions. Opto Diode positions its high-power near-infrared LEDs for demanding uses such as night vision, surveillance, industrial sensing, and advanced imaging, so beam quality, switching speed, output power, and rugged packaging all matter at the system level, not in isolation.

OD-110W specifications at a glance

The values below are taken directly from the OD-110W datasheet (electro-optical characteristics at 25°C).

Key absolute maximum ratings (25°C case) round out the drive envelope: 500 mA continuous forward current, 1.5 A peak forward current (10 µs, 200 Hz), 1000 mW power dissipation with derating above 25°C, a 5 V maximum reverse voltage, and a 100°C maximum junction temperature. Typical thermal resistance is 145°C/W in still air and 75°C/W with forced-air cooling.

What the numbers mean for your design

Three datasheet features explain how the OD-110W behaves inside a real system. First, beam uniformity: the die uses four wire bonds on its corners to produce a very uniform optical beam, which can help minimize illumination artifacts in imaging applications. For vision, sensing, and monitoring platforms, that evenness of illumination can matter as much as peak output. Second, switching speed: 20 ns typical rise and fall times support pulsed and modulated NIR illumination and timing-sensitive sensing. Third, coverage: the 110° half-intensity beam angle spreads light across a wide field, favoring broad-area illumination over a tightly focused spot.

The package reinforces all of this. The OD-110W ships in a standard 3-lead TO-39 hermetic can with gold-plated surfaces, rated for storage and operation from −40°C to +100°C, which suits aerospace, defense, and industrial environments where durability is not optional. One wiring detail to plan for: the part has two anode pins that must be externally connected together.

Where the OD-110W fits

Night vision and surveillance. The 850 nm emission sits in a widely used near-infrared band for active illumination, and the 110° beam angle supports broad-area coverage. Combined with 140 mW typical output and a uniform beam profile, the OD-110W is well suited to systems that need dependable NIR illumination across a wide field of view.

Defense and military imaging. Opto Diode describes its high-power NIR emitters as built for surveillance, night vision, and military imaging applications. The hermetic package, rugged construction, wide-angle pattern, and fast response support reliable active illumination in mission-focused environments. For programs whose requirements extend to fully covert, non-visible bands, see the related guide on covert IR illuminators and NVIS / MIL-STD-3009.

Industrial sensing and advanced imaging. For industrial platforms, the 20 ns switching supports dynamic, timing-sensitive sensing, while the wide beam helps where broad coverage is preferred over a narrow, high-intensity spot. In advanced imaging and sensing systems, the four-corner wire-bond design and uniform beam contribute directly to usable data quality.

Design considerations for engineers

When selecting an emitter for a defense or industrial optical system, raw output power is rarely the first question. What matters more is how the emitter behaves inside the actual optical geometry. The OD-110W offers a specific balance: its 110° beam angle favors coverage, its 20 ns switching favors speed, and its hermetic TO-39 package favors durability and long-term integration. For many sensing and imaging platforms, that combination is more valuable than a narrow, high-intensity emitter that does not match the system’s field of view. Practical planning points include derating power dissipation above 25°C per the thermal curve, keeping reverse voltage within the 5 V maximum, and tying the two anode pins together in the layout.

It also helps to view the OD-110W within Opto Diode’s broader near-infrared line, which spans roughly 700 nm to 1300 nm with single-chip outputs up to about 250 mW and multi-chip arrays up to about 1000 mW. Standard and custom configurations are available for wavelength, output, and packaging. Within that family, the wide-angle OD-110W is paired with the narrow-angle OD-110L, an otherwise similar 850 nm TO-39 emitter for applications that need more directed output. The GaAlAs IR emitter selection guide walks through choosing between wide- and narrow-angle options.

Why engineers choose Opto Diode

Opto Diode designs and manufactures its high-power NIR emitters in the United States, with on-site wafer fabrication at its Camarillo, California facility. As a division of Illinois Tool Works (ITW), the company is ISO 9001:2015 certified and ITAR registered, and it offers rugged, hermetically sealed packaging across aerospace, imaging, scientific research, and industrial programs. For engineers and procurement teams looking for proven optoelectronic components with customizable configurations from a domestic manufacturer, the OD-110W fits into that broader story of application-driven performance and durable packaging.

Frequently asked questions

What are the OD-110W’s key specifications?

The OD-110W is a super high-power GaAlAs NIR emitter with a typical 850 nm peak wavelength, 140 mW typical total power output (80 mW minimum) at 500 mA forward current, a 40 nm spectral bandwidth, a 110° half-intensity beam angle, and 20 ns typical rise and fall times, in a hermetic 3-lead TO-39 package.

What is the difference between the OD-110W and the OD-110L?

Both are ultra-high-power 850 nm GaAlAs NIR emitters in a hermetic TO-39 package that share four-corner wire-bond die construction. The OD-110W is the wide-angle version with a 110° half-intensity beam angle for broad-area coverage, while the OD-110L is the narrow-angle version for applications that need more directed output.

How fast can the OD-110W be modulated?

The OD-110W has typical rise and fall times of 20 ns, which supports pulsed and modulated near-infrared illumination and timing-sensitive industrial sensing.

What applications is the OD-110W designed for?

Opto Diode targets the OD-110W at night vision, surveillance, industrial sensing, advanced imaging, and defense and aerospace systems that need reliable, broad-area near-infrared illumination in a rugged, hermetic package.

Specify the OD-110W for your program

The OD-110W combines 850 nm peak emission, 140 mW typical output, a wide 110° beam, 20 ns switching, a uniform beam, and a hermetic TO-39 package rated from −40°C to +100°C, making it a practical choice when coverage, speed, and ruggedness all have to be weighed together. To match a wide- or narrow-angle 850 nm emitter to your optical geometry, contact Opto Diode for a quote, or download the product catalog for the full high-power NIR LED line.

Reviewed and updated July 2026.