CAMARILLO, Calif. – July 13, 2020 - Opto Diode Corporation, an ITW company, introduces the OD-110LISOLHT, a high-power, gallium aluminum arsenide (GaAlAs) infrared light-emitting diode (IRLED) illuminator. With a narrow angle of emission and a wide temperature rating, the new IR emitter is ideal for applications in industrial and defense/military tasks, such as exterior covert lighting on aircraft.
The total power output of the OD-110LISOLHT ranges from 50 mW (minimum) to 100 mW (typical), and features a storage and operating temperature of -65 °C to +150 °C. Peak emission wavelength is 880 nm with a spectral bandwidth of 55 nm (typical). The half intensity beam angle is 7 degrees (typical). The forward voltage is from 1.75 volts (typical) to 2 volts (maximum) with reverse breakdown voltage ranging from 5 volts (minimum) to 30 volts (typical). Other features include rise and fall times of 20 nanoseconds, respectively.
Opto Diode’s high-temperature, narrow-angle, 880 nm infrared emitter is housed in a 2-lead TO-39 package with an isolated case, making it easy to safely integrate into new and/or existing systems. The power dissipation is 1000 mW, continuous forward current is 500 mA, with peak forward current (10 µs, 200 Hz)2 at 1.5 A and reverse voltage of 5 volts.
To download Opto Diode’s UVG5S specification sheet, please go to: https://optodiode.com/pdf/UVG5S.pdf. To learn more about Opto Diode’s full line of sensors, detectors, optoelectronic modules, LEDs, and photonics assemblies for critical applications, visit: www.optodiode.com.