Opto Diode Corporation, an ITW company, introduces the BXT2S-68TE, a thermoelectrically-cooled (TEC), two-stage infrared (IR) detector developed for gas analysis, emissions monitoring, and process control.
Opto Diode Corporation, an ITW company, introduces a two-stage cooled, infrared (IR) detector, the BXT2S-38T. The new, high performance 9 mm² active area device is available in a TO8 package with a thermo-electric cooler (TEC) and flat sapphire window.
Opto Diode introduces a single-channel, uncooled infrared (IR) detector, the BXP-25E. Specially designed for fire and flame detection, the high-performance, lead selenide (PbSe) detector offers peak sensitivity between 3.6 µm and 3.8 µm and is available in a TO5 package with a flat sapphire window.
Opto Diode introduces a high-performance, two-stage, cooled, lead selenide (PbSe) detector that operates in the mid-infrared (IR) spectral region with peak sensitivity between 4.3 and 4.5 µm. The cooler on the BXT2S-28T allows the detector element to operate as low as -45 °C to maximize detectivity (D*). The device also features excellent responsivity of 7.5 x 104 V/W (typical). The exceptionally reliable detector provides the highest sensitivity when monitoring small changes in gas mixtures.
Opto Diode announces an ultraviolet-enhanced detector featuring a 5.5 mm diameter active area, the UVG20S. The photodiode is ideal for UV detection between 190 nm to 400 nm spectral wavelengths with a full spectrum of 190 nm out to 1000 nm.
Opto Diode announces a gallium aluminum arsenide (GaAlAs) near-infrared (IR) LED illuminator with ultra-high-power output, the OD-663-850. Specially designed for use in surveillance and night vision applications, the device has a very uniform optical beam with a peak emission wavelength of 850 nm.
Opto Diode announces the OD-110WISOLHT, a high-temperature, wide-angle infrared light-emitting diode (IRLED) specially designed for high-temperature applications, such as covert exterior aircraft lighting.
Opto Diode introduces the OD-110LISOLHT, a high-power, gallium aluminum arsenide (GaAlAs) infrared light-emitting diode (IRLED) illuminator. With a narrow angle of emission and a wide temperature rating, the new IR emitter is ideal for applications in industrial and defense/military tasks, such as exterior covert lighting on aircraft.
Opto Diode introduces the UVG5S, an ultraviolet-enhanced photodiode with a 5 mm2 circular active area. The new device is ideal for detection between 225 nm and 400 nm and features less than 2% response degradation after exposure to 7000J/cm2 at 254 nm.
Opto Diode introduces the SXUV5, an extreme ultraviolet (EUV) photodiode with a circular active area of 2.5 mm diameter. The new device has superior responsivity in the 1 nm to 190 nm wavelength regions, and is specially designed to be highly stable over long periods of time when exposed to high-intensity EUV energy.