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News

May 23, 2023
Opto Diode Corporation, an ITW company, introduces a high-performance quad electron detector, the AXUVPS7, with a total circular active area of 146 mm² (active area per element is 36.5 mm²). The new device joins the AXUV family of advanced technology sensors that are designed to detect electron energy levels from 100 eV to 50 KeV.
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December 15, 2022
Opto Diode Corporation, an ITW company, introduces the AXUV100G, a 100 mm x 100 mm active area electron detection device specially designed for use in radiation detection applications. The electron photodetector features electron responsivity at energy levels as low as 100eV. The shunt resistance is at 20 Mohms, minimum; reverse breakdown voltage is 5V (minimum) and 10V (typical). The high-performance AXUV100G’s capacitance is 5 nanofarads (nF), typical. Rise time is at a maximum of 10 μsec.
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August 15, 2022
Opto Diode provides a wide variety of ultraviolet-enhanced detectors specially designed for vital medical applications. The UVG family of photodiodes operate from 190 nm to 400 nm, and are available in two different configurations, circular and square. Opto Diode’s UVG photodiode configurations are easy to integrate into new and/or existing systems. They are successfully used in laser power monitoring, photolithography, and other high-power density systems that utilize ultraviolet light.
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June 20, 2022
Opto Diode products include the OD-663-850 NIR LED Illuminator with total power output from 300mW to 425mW (typical), making it ideal for high-power, near-infrared illumination tasks. The narrow-angle of emission OD-110L and the wide-angle of emission OD-110W are ultra-high-power GaAlAs NIR emitters that feature very uniform optical beams and peak emission wavelengths of 850 nm. These reliable devices are designed to operate under harsh, extreme temperatures and rugged conditions.
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March 31, 2022
Opto Diode Corporation, an ITW company, introduces an infrared light-emitting diode (IRLED) in a convenient TO-66 package for heatsink attach, the OD-669. The high-power gallium aluminum arsenide (GaAlAs) IRLED illuminator features a peak emission of 880 nm with an extremely wide angle of emission. Designed with nine chips connected in series, the robust device is housed in an electrically-isolated case, making it ideal for covert aircraft lighting or covert anti-collision lighting in aviation applications.
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September 14, 2021
Opto Diode Corporation, an ITW company, introduces the BXT2S-68TE, a thermoelectrically-cooled (TEC), two-stage infrared (IR) detector developed for gas analysis, emissions monitoring, and process control.
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July 22, 2021
Opto Diode Corporation, an ITW company, introduces a two-stage cooled, infrared (IR) detector, the BXT2S-38T. The new, high performance 9 mm² active area device is available in a TO8 package with a thermo-electric cooler (TEC) and flat sapphire window.
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May 10, 2021
Opto Diode introduces a single-channel, uncooled infrared (IR) detector, the BXP-25E. Specially designed for fire and flame detection, the high-performance, lead selenide (PbSe) detector offers peak sensitivity between 3.6 µm and 3.8 µm and is available in a TO5 package with a flat sapphire window.
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March 11, 2021
Opto Diode introduces a high-performance, two-stage, cooled, lead selenide (PbSe) detector that operates in the mid-infrared (IR) spectral region with peak sensitivity between 4.3 and 4.5 µm. The cooler on the BXT2S-28T allows the detector element to operate as low as -45 °C to maximize detectivity (D*). The device also features excellent responsivity of 7.5 x 104 V/W (typical). The exceptionally reliable detector provides the highest sensitivity when monitoring small changes in gas mixtures.
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November 16, 2020
Opto Diode announces an ultraviolet-enhanced detector featuring a 5.5 mm diameter active area, the UVG20S. The photodiode is ideal for UV detection between 190 nm to 400 nm spectral wavelengths with a full spectrum of 190 nm out to 1000 nm.
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October 4, 2020
Opto Diode announces a gallium aluminum arsenide (GaAlAs) near-infrared (IR) LED illuminator with ultra-high-power output, the OD-663-850. Specially designed for use in surveillance and night vision applications, the device has a very uniform optical beam with a peak emission wavelength of 850 nm.
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August 20, 2020
Opto Diode announces the OD-110WISOLHT, a high-temperature, wide-angle infrared light-emitting diode (IRLED) specially designed for high-temperature applications, such as covert exterior aircraft lighting.
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July 13, 2020
Opto Diode introduces the OD-110LISOLHT, a high-power, gallium aluminum arsenide (GaAlAs) infrared light-emitting diode (IRLED) illuminator. With a narrow angle of emission and a wide temperature rating, the new IR emitter is ideal for applications in industrial and defense/military tasks, such as exterior covert lighting on aircraft.
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June 17, 2020
Opto Diode introduces the UVG5S, an ultraviolet-enhanced photodiode with a 5 mm2 circular active area. The new device is ideal for detection between 225 nm and 400 nm and features less than 2% response degradation after exposure to 7000 J/cm2 sat 254 nm.
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May 28, 2020
Opto Diode introduces the SXUV5, an extreme ultraviolet (EUV) photodiode with a circular active area of 2.5 mm diameter. The new device has superior responsivity in the 1 nm to 190 nm wavelength regions, and is specially designed to be highly stable over long periods of time when exposed to high-intensity EUV energy.
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April 13, 2020
Opto Diode announces AXUV576C, a large square photodiode with a 576.5 mm2 active area that is specially designed for electron and radiation detection.
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March 25, 2020
Opto Diode announces AXUV300C, a large, rectangular photodiode with a large 331 mm2 rectangular active area for electron detection.
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December 11, 2018
Opto Diode announces a new high-speed photodetector, the AXUV63HS1.  With a circular active area of 9 mm diameter (typically 63 mm2), the photodiode is ideal for electron detection.
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November 7, 2018
Opto Diode announces AXUV20HS1, a high-speed, 5 mm2 circular photodiode for radiation detection.
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September 13, 2018
Opto Diode announces 5 mm2 circular photodiodes for radiation detection.
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July 18, 2018
Opto Diode announces extreme ultraviolet, directly-deposited thin-film filter photodiodes for scientific applications.
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December 11, 2017
Opto Diode introduces 13.5 nm directly-deposited thin-film filter photodetectors.
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October 16, 2017
Opto Diode presents BXT2-17TF - two-stage, cooled, packaged infrared detector.
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March 30, 2017
Opto Diode’s new NXIR-5C, red to near-infrared enhanced surface-mount photodiode.
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January 30, 2017
Opto Diode introduces near-infrared, surface-mount detector.
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January 17, 2017
Opto Diode introduces deep red surface-mount LED.
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October 10, 2016
Opto Diode introduces low-noise, extreme ultraviolet (EUV) photodetector.
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January 12, 2016
Opto Diode introduces family of near-infrared detectors.
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September 21, 2015
Opto Diode introduces a wide temperature range infrared emitter.
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August 18, 2015
Opto Diode introduces UVG12 - 13 mm2 photodiode.
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July 6, 2015
Opto Diode introduces high-powered GaAlAs near-infrared emitters.
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January 13, 2015
Opto Diode introduces CalSensors’ SCD-B infrared detectors.
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December 15, 2014
Opto Diode Introduces the SXUV300C 331mm2 Photodiode
November 17, 2014
Opto Diode’s New Quadrant Photodiode 5 mm2 - SXUVPS4
September 25, 2014
Opto Diode’s New High Speed Ø5 mm Photodiode - SXUV20HS1
August 14, 2014
Opto Diode Introduces SXUV5 Ø2.5 mm Photodiode
February 24, 2014
Opto Diode Introduces UV/EUV Continuous Position Sensor
January 6, 2014
Opto Diode’s Introduces a 10 mm2 Photodiode - SXUV100
November 18, 2013
Opto Diode’s New Quadrant Photodiode 5 mm2 - SXUVPS4C
October 8, 2013
Opto Diode’s New Radiation-Hard Photodiodes for Electron Detection - UVG20C
September 12, 2013
Opto Diode’s IntroducesUVG100 Photodiode with 100 mm2 Active Area
August 21, 2013
Opto Diode’s Introduces High-Power Optical Output IRLED Illuminator
July 10, 2013
Opto Diode’s Introduces 20-Element Photodiode for Electron Detection and Bolometry
May 13, 2013
Opto Diode’s New16-Element Photodiode for Electron Detection
July 23, 2012
Opto Diode’s Introduces Surface Mount Photodiode
July 13, 2012
Opto Diode’s Introduces Surface Mount Photodiode with Daylight Filter
April 11, 2012
Opto Diode’s New Ultra-High Optical Output IR Emitters
March 19, 2012
Opto Diode Announces Super High-Power IR Emitters
January 24, 2012
Opto Diode’s New, Medium Emission Angle, High-Power IR LED
January 23, 2012
Opto Diode Introduces High-Power, Narrow-Angle IR Emitters
January 19, 2012
Opto Diode Introduces Wide-Emission, High-Power IR LEDs
October 24, 2011
Opto Diode Provides Advanced Ultraviolet and Extreme Ultraviolet Photodiodes with High Stability
February 10, 2011
Opto Diode Introduces Absolute X-ray Photodiodes for Solar Spectrum Studies
January 10, 2011
Opto Diode Announces Acquisition of International Radiation Detectors, Inc.
December 23, 2010
Opto Diode Offers Custom, High Quality LEDs, Made in USA
July 7, 2010
Opto Diode Introduces High Power, 30-Die, Infrared LED Array
January 11, 2010
Opto Diode Introduces New OD-624L High Output Red LED
November 30, 2009
Opto Diode Introduces New OD-469L High Output Blue LCDs
May 26, 2009
Opto Diode’s New Selective Wavelength Photodiodes - Ideal for Automotive Applications
October 23, 2008
Opto Diode Introduces New, Blue/Green Enhanced Silicon Photodiode Preamplifier
September 3, 2008
Opto Diode Offers New 6 mm2 Silicon Photodiode Preamp Combo
June 18, 2008
Opto Diode Introduces New Blue/Green Enhanced Silicon Photodiode-Preamplifier
February 20, 2008
Opto Diode Introduces Lower Noise, NIR/Red-Enhanced, Photodiode-Preamplifier
January 16, 2008
Opto Diode Introduces New NIR Photodiode Preamp Combo
March 16, 2007
Opto Diode Introduces New Bi-Cell Photodiode
May 23, 2005
Opto Diode Now Shipping 60 Die LED Arrays