- Temperature and Polarization Performance of EUV Silicon Photodiodes
- Characterization of Silicon Photodiode Detectors with Multilayer Filter Coatings for 17 – 150 Angstrom
- Stable Silicon Photodiodes for Absolute Intensity Measurements in the VUV and Soft X-ray Regions
- Absolute Silicon Photodiodes for 160 nm to 254 nm photons
- Silicon Photodiodes with Integrated Thin Film Filters for Selective Bandpasses in the Extreme Ultraviolet
- Fundamental Limits to Detection of Low-Energy Ions using Silicon Solid-State Detectors
- Response of 100% Internal Quantum Efficiency Silicon Photodiodes to 200 eV to 40 keV Electrons
- Response of 100% Internal Carrier Collection Efficiency Silicon Photodiodes to Low-Energy Ions
- Temperature Dependence of the EUV Responsivity of Silicon Photodiode Detectors
