News
June 20, 2022
Opto Diode products include the OD-663-850 NIR LED
Illuminator with total power output from 300mW to 425mW (typical), making it ideal for high-power, near-infrared illumination tasks. The narrow-angle of emission OD-110L and the wide-angle of emission OD-110W are ultra-high-power GaAlAs NIR emitters that feature very uniform optical beams and peak emission wavelengths of 850 nm. These reliable devices are designed to operate under harsh, extreme temperatures and rugged conditions.
Illuminator with total power output from 300mW to 425mW (typical), making it ideal for high-power, near-infrared illumination tasks. The narrow-angle of emission OD-110L and the wide-angle of emission OD-110W are ultra-high-power GaAlAs NIR emitters that feature very uniform optical beams and peak emission wavelengths of 850 nm. These reliable devices are designed to operate under harsh, extreme temperatures and rugged conditions.
March 31, 2022
Opto Diode Corporation, an ITW company, introduces an infrared light-emitting diode (IRLED) in a convenient TO-66 package for heatsink attach, the OD-669. The high-power gallium aluminum arsenide (GaAlAs) IRLED illuminator features a peak emission of 880 nm with an extremely wide angle of emission. Designed with nine chips connected in series, the robust device is housed in an electrically-isolated case, making it ideal for covert aircraft lighting or covert anti-collision lighting in aviation applications.
May 10, 2021
Opto Diode introduces a single-channel, uncooled infrared (IR) detector, the BXP-25E. Specially designed for fire and flame detection, the high-performance, lead selenide (PbSe) detector offers peak sensitivity between 3.6 µm and 3.8 µm and is available in a TO5 package with a flat sapphire window.
March 11, 2021
Opto Diode introduces a high-performance, two-stage, cooled, lead selenide (PbSe) detector that operates in the mid-infrared (IR) spectral region with peak sensitivity between 4.3 and 4.5 µm. The cooler on the BXT2S-28T allows the detector element to operate as low as -45 °C to maximize detectivity (D*). The device also features excellent responsivity of 7.5 x 104 V/W (typical). The exceptionally reliable detector provides the highest sensitivity when monitoring small changes in gas mixtures.
October 4, 2020
Opto Diode announces a gallium aluminum arsenide (GaAlAs) near-infrared (IR) LED illuminator with ultra-high-power output, the OD-663-850. Specially designed for use in surveillance and night vision applications, the device has a very uniform optical beam with a peak emission wavelength of 850 nm.
July 13, 2020
Opto Diode introduces the OD-110LISOLHT, a high-power, gallium aluminum arsenide (GaAlAs) infrared light-emitting diode (IRLED) illuminator. With a narrow angle of emission and a wide temperature rating, the new IR emitter is ideal for applications in industrial and defense/military tasks, such as exterior covert lighting on aircraft.
May 28, 2020
Opto Diode introduces the SXUV5, an extreme ultraviolet (EUV) photodiode with a circular active area of 2.5 mm diameter. The new device has superior responsivity in the 1 nm to 190 nm wavelength regions, and is specially designed to be highly stable over long periods of time when exposed to high-intensity EUV energy.
July 10, 2013
Opto Diode’s Introduces 20-Element Photodiode for Electron Detection and Bolometry
October 24, 2011
Opto Diode Provides Advanced Ultraviolet and Extreme Ultraviolet Photodiodes with High Stability
May 26, 2009
Opto Diode’s New Selective Wavelength Photodiodes - Ideal for Automotive Applications