The AXUV100TF030 (part number ODD-AXU-019) and the AXUV100TF400 (ODD-AXU-002) are 100 mm² silicon photodiodes from Opto Diode, a division of ITW, manufactured in Camarillo, California. Both are built on the same windowless AXUV silicon as the unfiltered AXUV100G — one 10 mm × 10 mm active area — but each carries an integrated thin-film filter that selects a single band out of the AXUV range. The TF030 is specified for 1–12 nm detection at 0.16 A/W typical at 3 nm; the TF400 for 18–80 nm at 0.15 A/W typical at 40 nm. Both ship with a protective cover.
📄 Download the AXUV100TF030 datasheet (PDF)
📄 Download the AXUV100TF400 datasheet (PDF)
The two documents carry different revision dates — October 10, 2024 for the TF030 and December 17, 2022 for the TF400. Both are the current controlled copies, and both are the files linked from the AXUV product-category page. The specifications below follow those two revisions exactly; where a value is not in them, this page says so rather than filling the gap.
Same AXUV die, two integrated filters
Opto Diode’s 100 mm² AXUV detector is a single-element, windowless silicon photodiode with a 10 mm × 10 mm active area. Sold unfiltered as the AXUV100G, it responds across the AXUV family range of 0.0124–190 nm. That breadth is exactly what makes it useful for total-flux measurement — and exactly what makes it unsuitable when the instrument has to see one part of the spectrum and not the rest.
The TF parts address that by depositing a thin-film filter directly over the die. There is no separate filter to mount, align, or account for in the optical path, and the assembly stays vacuum compatible. What you get in return is a fixed passband: the filter is part of the detector, so the band is chosen at the point of purchase rather than in the instrument.
| Model | Part number | Detection range | Responsivity (typ) | Active area |
|---|---|---|---|---|
| AXUV100TF030 | ODD-AXU-019 | 1–12 nm | 0.16 A/W at 3 nm | 100 mm² |
| AXUV100TF400 | ODD-AXU-002 | 18–80 nm | 0.15 A/W at 40 nm | 100 mm² |
AXUV100TF030 electro-optical characteristics at 25 °C
| Parameter | Test conditions | Min | Typ | Max | Units |
|---|---|---|---|---|---|
| Active area | 10 mm × 10 mm | — | 100 | — | mm² |
| Responsivity | See responsivity graph in datasheet; features list gives 0.16 A/W at 3 nm | — | 0.16 | — | A/W |
| Capacitance, C | VR = 0 V | — | 10 | 44 | nF |
The datasheet specifies no dark current, no response time, and no reverse breakdown voltage for this part. Page 2 carries the typical responsivity curve at 25 °C, plotted from 0 to 20 nm, a capacitance-vs-bias-voltage plot, and the package drawing, dimensioned in inch [metric] units.
AXUV100TF400 electro-optical characteristics at 25 °C
| Parameter | Test conditions | Min | Typ | Max | Units |
|---|---|---|---|---|---|
| Active area | 10 mm × 10 mm | — | 100 | — | mm² |
| Responsivity | See responsivity graph in datasheet; features list gives 0.15 A/W at 40 nm | — | 0.15 | — | A/W |
| Reverse breakdown voltage, VR | IR = 1 µA | 5 | 10 | — | V |
| Capacitance, C | VR = 0 V | — | 10 | 44 | nF |
A reverse breakdown voltage of 5 V minimum, 10 V typical, is a limit — not an operating point and not headroom. Size the applied reverse bias well below the 5 V minimum, because that minimum is the lowest value any individual unit is specified to reach. Note also that the TF400’s capacitance-vs-reverse-bias plot runs its horizontal axis out to 10 V; that axis range is not an endorsement of biasing there. The AXUV100TF030 datasheet carries no breakdown row at all, so there is no published limit to design against — confirm the safe bias with Opto Diode before applying reverse voltage to either part.
The datasheet prints this test condition as “1R = 1 µA”; that is a typographic rendering of IR, the reverse current at which breakdown is defined. The TF400 datasheet has not been revised since December 2022; the equivalent row was removed from other AXUV and SXUV sheets at the October 2024 revision, which is a further reason to confirm the limit with Opto Diode.
What the datasheets leave open
Three things are worth knowing before you design around either part.
- Responsivity has no minimum or maximum. Both sheets publish a typical value only, and both give the test condition as the responsivity graph rather than a single wavelength. The headline figures — 0.16 A/W at 3 nm and 0.15 A/W at 40 nm — are points on those curves, not flat-band values. Read your own wavelength off the plot.
- No out-of-band rejection figure is published. The datasheets state the detection range but give no rejection ratio outside it — and the TF400’s responsivity curve is not flat zero outside its band: it shows a short-wavelength lobe below roughly 2 nm that rises above the in-band value before the response falls away across the 3–17 nm region. If your source carries significant flux beyond the passband, request the filter transmission data rather than assuming a rejection level.
- Shunt resistance is not restated here. Both sheets carry a shunt-resistance row at a ±10 mV test condition, but the unit printed against it does not agree with the unit given for the same measurement elsewhere in the 100 mm² AXUV line, so this page does not reproduce it. Shunt resistance sets the Johnson-noise floor of an unbiased photodiode, so confirm the figure with Opto Diode before designing near the detection limit.
Temperature ratings and handling
| Storage & operating range | Rating |
|---|---|
| Ambient | -10 °C to 40 °C |
| Nitrogen or vacuum | -20 °C to 80 °C |
| Lead soldering temperature | 260 °C (0.080 in from case, 10 seconds) |
Both datasheets carry the same thermal table, and both ranges are storage and operating limits — check vacuum bake-out and chamber processing temperatures against them, not just the running temperature of the instrument.
Both parts are shipped with a protective cover. Review the application note Handling Precautions for AXUV, SXUV, and UVG Detectors before removing it — the filter surface and the wire bonds are both exposed once the cover is off.
Covering 1–80 nm with the SXUV100TF135
The TF030 stops at 12 nm and the TF400 starts at 18 nm; the SXUV100TF135 — a 100 mm² filtered detector on radiation-hardened SXUV silicon — covers 12–18 nm. Taken together, the three filtered 100 mm² parts tile the range from 1 nm to 80 nm with no gap between adjacent bands.
| Model | Detection range | Responsivity (typ) | Silicon |
|---|---|---|---|
| AXUV100TF030 | 1–12 nm | 0.16 A/W at 3 nm | AXUV |
| SXUV100TF135 | 12–18 nm | 0.09 A/W at 13.5 nm | SXUV |
| AXUV100TF400 | 18–80 nm | 0.15 A/W at 40 nm | AXUV |
The choice between them is a wavelength decision first. If it is also a lifetime decision — sustained exposure that would degrade a standard AXUV surface — the AXUV vs SXUV selection guide compares the two families directly.
Where AXUV detectors are used
- Electron detection
- Synchrotron radiation monitoring
- Electron reticle inspection
These are the applications of the AXUV family as a whole. For the physics behind the 100% internal quantum efficiency that AXUV silicon achieves, see how AXUV photodiodes work; to compare the filtered parts against the rest of the line, browse the full AXUV photodiode range.
Request a quote or a custom filter configuration
For pricing, lead time, stock, or a passband not covered by the standard TF parts, contact the Opto Diode team — the standard response time for an online request is within 1-2 business days. Direct orders must meet a $3,000 minimum.
Request a quoteContact Opto DiodeDownload the product catalog
Frequently Asked Questions
What wavelengths do the AXUV100TF030 and AXUV100TF400 detect?
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The AXUV100TF030 detects 1–12 nm and the AXUV100TF400 detects 18–80 nm, according to the features list on each datasheet. Both are 100 mm² parts built on the same windowless AXUV silicon, and the integrated thin-film filter is what sets the band. The SXUV100TF135 covers 12–18 nm, so the three filtered 100 mm² parts together span 1–80 nm.
What is the responsivity of the AXUV100TF030 and AXUV100TF400?
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The AXUV100TF030 datasheet gives 0.16 A/W typical at 3 nm and the AXUV100TF400 datasheet gives 0.15 A/W typical at 40 nm. Neither sheet publishes a minimum or a maximum, and both give the test condition as the responsivity graph rather than a single wavelength, so read the value for your own wavelength off the curve in the datasheet.
Can the AXUV100TF400 be reverse biased?
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The AXUV100TF400 datasheet specifies a reverse breakdown voltage of 5 V minimum and 10 V typical at a reverse current of 1 µA. Treat that as an absolute limit rather than an operating point, and keep any applied reverse bias well below the 5 V minimum. The AXUV100TF030 datasheet specifies no reverse breakdown voltage at all, so confirm the safe bias with Opto Diode before applying one.
How do the filtered parts differ from the AXUV100G?
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All three use the same 100 mm² active area, a single 10 mm × 10 mm element on windowless AXUV silicon. The AXUV100G is the unfiltered part and responds across the AXUV family range of 0.0124–190 nm. The AXUV100TF030 and AXUV100TF400 each carry an integrated thin-film filter that restricts the response to one band — 1–12 nm and 18–80 nm respectively — which is how you select a band without adding a separate filter to the optical path.
Related
Specifications from the AXUV100TF030 datasheet, Revision October 10, 2024, and the AXUV100TF400 datasheet, Revision December 17, 2022. Reviewed and updated August 2026.