The SXUV100TF135 is a 100 mm² silicon photodiode from Opto Diode, a division of ITW, built in Camarillo, California, with a thin-film filter integrated into the detector. The filter sets a detection range of 12 nm to 18 nm and gives a typical responsivity of 0.09 A/W at 13.5 nm, the EUV lithography wavelength — so the in-band measurement is made without adding a separate spectral-purity filter to the optical path. It is the filtered counterpart to the unfiltered SXUV100, which carries the same 10 mm × 10 mm active area across the full 1–190 nm SXUV band.
📄 Download the full datasheet: SXUV100TF135 (PDF) — includes the typical responsivity curve, capacitance vs. reverse bias, and the package drawing.
What the integrated thin-film filter does
An EUV source does not emit only at 13.5 nm. A bare silicon detector placed in that environment also responds to out-of-band plasma emission, and that unwanted signal lands on top of the dose reading. The usual answer is a separate spectral-purity filter in front of the detector — one more optic to mount, align, and keep clean.
The SXUV100TF135 moves that job into the detector. The datasheet specifies a detection range of 12 nm to 18 nm, and the typical responsivity plot on page 2 shows the shape of that passband directly: response stays below about 0.01 A/W from 5 nm to 11 nm, shows a small secondary feature near 12 nm, then rises steeply to a peak just under 0.10 A/W between 12.5 nm and 13 nm and reads about 0.09 A/W at 13.5 nm. Above that the roll-off is gradual rather than a cliff: the curve is still above 0.02 A/W at 18 nm, the upper end of the stated detection range, and only approaches zero at the graph’s 20 nm limit. Both edges of the quoted 12–18 nm range sit near 0.02 A/W, so read it as a passband definition rather than a hard cut-off. The datasheet plots nothing outside 5–20 nm and therefore makes no statement about response at visible or infrared wavelengths. Nothing has to be added in front of the diode to obtain that band.
Whether the integrated filter alone is sufficient depends on the stray-light environment of the specific tool, so review the responsivity curve against your own out-of-band spectrum. For the wider picture of how these detectors are deployed in a source or scanner, see the EUV photodiode 13.5 nm power and dose monitoring guide — the SXUV100TF135 is the integrated-filter option that guide describes.
Electro-optical characteristics at 25 °C
| Parameter | Test conditions | Min | Typ | Max | Units |
|---|---|---|---|---|---|
| Active area | 10 mm × 10 mm | — | 100 | — | mm² |
| Responsivity | See responsivity curve; 0.09 A/W typ is the 13.5 nm figure | 0.08 | 0.09 | 0.1 | A/W |
| Dark current | VR = 15 V | — | 8 | 25 | nA |
| Reverse breakdown voltage, VR | IR = 1 µA | 25 | — | — | V |
| Capacitance, C | VR = 0 V | 0.8 | 1 | 1.2 | nF |
| Response time, tr | RL = 50 Ω, VR = 12 V, 450 nm laser | — | 30 | — | ns |
Two conditions are worth reading carefully. The response time of 30 ns is a device-level measurement taken with a 450 nm laser source, not an in-band 13.5 nm measurement — treat it as a characteristic of the diode and confirm timing margin against your own optics. And the reverse breakdown voltage of 25 V is a minimum, defined at the point where reverse current reaches 1 µA — it guarantees the device will not break down below 25 V, and it is not an absolute maximum rating. The datasheet publishes no absolute maximum ratings, so treat the characterised conditions — 15 V for dark current, 12 V for response time — as the specified operating points rather than reading 25 V as a permitted bias. The datasheet also plots capacitance against reverse bias out to 20 V, where capacitance falls steeply as bias is applied.
Temperature ratings
| Storage & operating range | Rating |
|---|---|
| Ambient | −10 °C to 40 °C |
| Nitrogen or vacuum | −20 °C to 80 °C |
| Lead soldering temperature | 260 °C (0.080″ from case, 10 seconds) |
The SXUV100TF135 is shipped with a protective cover. Review the application note Handling Precautions for AXUV, SXUV, and UVG Detectors before removing it — the cover protects the photodiode and its wire bonds, and a thin-film filter surface is not something to clean casually.
Key features
- 100 mm² square active area (10 mm × 10 mm)
- Responsivity 0.09 A/W typical at 13.5 nm
- Detection range 12 nm to 18 nm, set by the integrated thin-film filter
- Shipped with a protective cover
SXUV100TF135 or SXUV100: filtered or broadband
Both parts are 100 mm² SXUV detectors. The difference is what reaches the silicon.
| Parameter | SXUV100TF135 (filtered) | SXUV100 (unfiltered) |
|---|---|---|
| Detection range | 12–18 nm, set by the integrated filter | 1–190 nm |
| Responsivity | 0.09 A/W typ at 13.5 nm (0.08 min / 0.1 max) | Specified as a curve, not a single figure |
| Active area | 100 mm² (10 mm × 10 mm) | 100 mm² (10 mm × 10 mm) |
| Capacitance @ VR = 0 V | 1 nF typ (0.8–1.2 nF) | 5 nF typ, 15 nF max |
| Response time | 30 ns typ (RL = 50 Ω, VR = 12 V, 450 nm laser) | 6 µs max (RL = 50 Ω, VR = 8 V) |
| Dark current | 8 nA typ, 25 nA max @ VR = 15 V | Not in the spec table; the datasheet plots dark current vs. voltage. Shunt resistance 10 MΩ min @ ±10 mV |
| Suited to | In-band measurement at 13.5 nm | Broadband EUV and soft X-ray work across 1–190 nm |
The two response-time figures are not a like-for-like speed comparison: one is a typical value at 12 V bias with a 450 nm laser, the other a maximum at 8 V bias. Read each against its own test conditions. Values are taken from the SXUV100TF135 datasheet (Revision October 30, 2024) and the SXUV100 datasheet (Revision October 10, 2024).
Where the SXUV100TF135 fits
- EUV lithography dose and power monitoring — in-band measurement at 13.5 nm, with the passband set at the detector
- EUV source characterisation — separating in-band output from broadband plasma emission
- Large-area in-band flux capture — the 100 mm² active area collects signal over a large aperture
If the application needs response outside 12–18 nm — soft X-ray spectroscopy, synchrotron and beamline metrology, or broadband measurement across the full 1–190 nm band — the unfiltered SXUV100 or another member of the SXUV range is the correct choice. Choosing between detector families altogether? The AXUV vs SXUV selection guide compares them directly.
Related SXUV detectors
| Model | Part number | Description | Active area |
|---|---|---|---|
| SXUV100TF135 | — | Photodiode with integrated filter (this page) | 100 mm² |
| SXUV100 | ODD-SXU-001 | Large EUV photodetector (1–190 nm) | 100 mm² |
| SXUV20C | ODD-SXU-051 | EUV low-noise photodetector (1–190 nm) | 20 mm² |
| SXUV300C | ODD-SXU-044 | Large EUV high-speed ceramic package photodetector (1–190 nm) | 331 mm² |
Browse the full SXUV EUV photodiode range.
Request a quote or a custom configuration
Tell us your in-band wavelength, expected flux, required active area, and bias and bandwidth targets, and our engineers will confirm whether the SXUV100TF135 or another SXUV configuration fits — custom active areas, coatings, and packaging are available. Online requests receive a response within 1–2 business days.
Frequently asked questions
What wavelength range does the SXUV100TF135 cover?
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12 nm to 18 nm. The integrated thin-film filter sets the detection range around the 13.5 nm EUV lithography wavelength, where typical responsivity is 0.09 A/W. The unfiltered SXUV100 covers the full 1 nm to 190 nm SXUV band instead.
What is the responsivity of the SXUV100TF135 at 13.5 nm?
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0.09 A/W typical at 13.5 nm, with a datasheet minimum of 0.08 A/W and a maximum of 0.1 A/W. The datasheet also plots typical responsivity across 5 nm to 20 nm, so the shape of the passband can be read rather than a single point.
Should I choose the SXUV100TF135 or the unfiltered SXUV100?
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Choose the SXUV100TF135 when the measurement is in band at 13.5 nm and out-of-band light would corrupt it, because the filter is built into the detector instead of being added as a separate optic. Choose the SXUV100 when you need the full 1 nm to 190 nm response, for example broadband soft X-ray or synchrotron beamline work. Both parts share the same 100 mm² active area.
How fast is the SXUV100TF135?
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The datasheet gives a typical response time of 30 ns, measured with a 50 Ω load, 12 V reverse bias and a 450 nm laser source. That is a device-level figure rather than an in-band 13.5 nm measurement, so confirm timing margin against your own optical setup.
Related pages
Specifications from the SXUV100TF135 datasheet, Revision October 30, 2024. Reviewed and updated August 2026.