Blog

APD series

Opto Diode Corporation, a division of Illinois Tool Works (ITW), has released a new avalanche photodiode (APD) series designed and fabricated at its wafer-fabrication facility in Camarillo, California. The line comprises three hermetically sealed detectors: two silicon models covering 400–1100 nm and one InGaAs model covering 900–1700 nm. Each uses internal avalanche gain to pull faint, fast optical signals out of the noise across the visible and shortwave-infrared (SWIR) spectrum, and every device ships in a rugged TO-46 can suited to LiDAR, laser range-finding, optical communications, and scientific instrumentation.

What an avalanche photodiode does

An APD is a photodiode run under high reverse bias, so photo-generated carriers accelerate and trigger impact ionization — multiplying the signal internally before it ever reaches your amplifier. That built-in gain (M) lifts weak returns above circuit noise, which is why APDs are the detector of choice when light is photon-starved, pulses are short, or the required bandwidth is high. Compared with a standard PIN photodiode, a well-matched APD can deliver a markedly better signal-to-noise ratio in low-light, high-speed systems such as time-of-flight LiDAR and eye-safe laser rangefinders.

The new APD series at a glance

The three models share a common design language — fast response, low capacitance, low noise, high gain, and a hermetically sealed package — while each is optimized for a different wavelength band.

Model	Material & range	Typ. responsivity (M=1)	Active area	Typ. dark current	Speed	Package
ODD-APD-002	Silicon, 400–1100 nm	0.55 A/W @ 905 nm	Ø0.5 mm (0.2 mm²)	0.4 nA (M=100)	0.5 ns rise time	TO-46
ODD-APD-003	Silicon, 400–1100 nm	0.36 A/W @ 1064 nm	Ø0.5 mm (0.2 mm²)	5.0 nA (M=100)	2.0 ns response	TO-46
ODD-APD-001	InGaAs, 900–1700 nm	1.0 A/W @ 1550 nm	Ø0.2 mm (0.031 mm²)	8.0 nA (M=10)	1.25 GHz bandwidth	TO-46

Values are typical figures at 25 °C from each datasheet; consult the full documents for minimum and maximum limits and recommended operating conditions.

Silicon APDs for 905 nm and 1064 nm

Both silicon devices use a large Ø500 µm circular active area for generous photon collection while keeping capacitance low. The ODD-APD-002 is tuned for 905 nm — the workhorse wavelength for pulsed-laser-diode LiDAR and rangefinders — with 0.55 A/W responsivity, a rise time as short as 0.5 ns, dark current down to 0.2 nA, and a reverse breakdown voltage of 100–220 V. The ODD-APD-003 is optimized for 1064 nm Nd:YAG lines, delivering 0.36 A/W at that wavelength and operating at a higher 350–460 V breakdown, which suits target designators, laser spot trackers, and pulsed-laser detection. Both are rated for −45 to +85 °C operation.

InGaAs APD for SWIR and 1550 nm

The ODD-APD-001 extends coverage into the shortwave infrared, spanning 900–1700 nm with peak responsivity of 1.0 A/W at 1550 nm. Its Ø200 µm active area and typical −3 dB bandwidth of 1.25 GHz make it well suited to high-speed, eye-safe 1550 nm LiDAR, fiber and free-space optical communications, spectroscopy, and life-science instruments such as DNA sequencers. It shares the same hermetic TO-46 housing and is rated for −40 to +85 °C.

Applications and in-house manufacturing

Across the series, the combination of high gain, low noise, and fast response supports a broad range of precision optical systems:

Time-of-flight LiDAR, laser rangefinders, and autonomous-vehicle sensing
Target designators, laser spot trackers, and spaceborne LiDAR
Fiber and free-space optical communications and data links
Spectroscopy, scientific instrumentation, and DNA sequencing
Aerospace and defense target detection

Every APD is designed, fabricated, and characterized at Opto Diode’s facility in Camarillo, California, where on-site wafer fabrication gives full control over quality, performance consistency, and traceability. As an ISO 9001:2015-certified, ITAR-registered ITW company, Opto Diode qualifies each device against strict electrical and optical standards before it ships — the dependability engineers need for mission-critical work in defense, aerospace, and scientific research.

Frequently asked questions

What is an avalanche photodiode, and why use one?

An avalanche photodiode is a photodiode operated under high reverse bias so that photo-generated carriers trigger impact ionization, multiplying the signal internally. That gain raises weak optical returns above amplifier noise, giving APDs a better signal-to-noise ratio than standard PIN photodiodes in low-light, short-pulse, and high-bandwidth applications such as LiDAR and laser range-finding.

Which Opto Diode APD should I choose for my wavelength?

For the visible to near-infrared band (400–1100 nm), choose a silicon model: ODD-APD-002 is optimized for 905 nm and ODD-APD-003 for 1064 nm. For shortwave infrared and telecom wavelengths (900–1700 nm, including 1550 nm), choose the InGaAs ODD-APD-001. If you are still narrowing the field, see the guide on how to choose a photodetector.

What package and operating temperatures do these APDs use?

All three ship in a hermetically sealed TO-46 package for reliability under thermal and mechanical stress. The silicon models (ODD-APD-002 and ODD-APD-003) are rated for −45 to +85 °C, and the InGaAs ODD-APD-001 is rated for −40 to +85 °C.

Where are these APDs made, and how do I order?

They are designed, fabricated, and tested at Opto Diode’s Camarillo, California facility, a division of ITW. Online quote requests are typically answered within one to two business days, and direct orders carry a $3,000 minimum. Contact the sales team to request specifications, datasheets, or integration support.

Explore the APD series

Browse the full avalanche photodiode product category, download the individual datasheets, or contact our team to discuss your wavelength, speed, and packaging requirements. You can also download the product catalog for the complete Opto Diode detector lineup.

Reviewed and updated July 2026.