Detailed specification pages for Opto Diode’s photodiodes, infrared detectors, emitters and detector modules — each one built from the controlled datasheet for that part, with full electro-optical tables, package data and application guidance. Opto Diode, a division of ITW, manufactures every product below in Camarillo, California. For the complete product line with datasheet downloads and quote links, see the Detection, Emission and Integration category pages.

AXUV · SXUV · UVG UV / EUV / X-rayPbS · PbSe infraredSA / SHA emittersAPD · ODA gain & modules

SXUV Photodiodes — EUV & Radiation-Hardened

Radiation-hardened silicon photodiodes engineered to hold their response after EUV and UV exposure, characterized from 1 to 190 nm, used for dose and power monitoring in EUV lithography and beamline instrumentation. See also AXUV vs SXUV: how to choose.

UVG Photodiodes — UV-Enhanced Silicon

UV-enhanced silicon detectors specified across 190 to 400 nm for DUV and UV measurement.

Infrared Detectors — PbS & PbSe

Lead-salt photoconductive detectors for short- and mid-wave infrared sensing: PbS covers 1–3 µm and PbSe covers 1–5 µm. Start with the PbS vs PbSe selection guide if you are choosing between them.

Not sure which part fits your measurement? Send the wavelength, active area and speed you need — Opto Diode typically responds to online requests within 1–2 business days.

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Reviewed and updated August 2026.